発光装置

Light-emitting device

Abstract

【課題】半導体発光素子と蛍光体とを組み合わせた発光装置において、光出力を効率良く取り出すことができるようにする。 【解決手段】UV−LEDから出射したUV光を蛍光体層18に入射し、この蛍光体層18で生成した発光光を、蛍光体層18を通過せずにUV−LEDを透過してプレート12側から取り出すように構成した。 【選択図】図2
<P>PROBLEM TO BE SOLVED: To efficiently extract light output from a light-emitting device which is constituted by a combination of a semiconductor light-emitting chip and fluorescent substances. <P>SOLUTION: The light-emitting device is constituted in such a way that a fluorescent-substance layer 18 is irradiated with a UV light emitted from a UV-LED, and the lights generated in the fluorescent-substrate layer 18 penetrate the UV-LED and are extracted from a plate 12 side without passing through the fluorescent-substance layer 18. <P>COPYRIGHT: (C)2006,JPO&NCIPI

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Cited By (10)

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    JP-2010512660-AApril 22, 2010ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニアThe Regents of The University of California, 独立行政法人科学技術振興機構無極性および半極性の発光デバイス
    JP-2011222642-ANovember 04, 2011Nichia Chem Ind Ltd, 日亜化学工業株式会社Light-emitting device
    US-9130119-B2September 08, 2015The Regents Of The University Of California, Japan Science And Technology AgencyNon-polar and semi-polar light emitting devices
    US-9293670-B2March 22, 2016Crystal Is, Inc.Ultraviolet light-emitting devices and methods
    US-9548431-B2January 17, 2017Crystal Is, Inc.Ultraviolet light-emitting devices and methods
    US-9685587-B2June 20, 2017The Silanna Group Pty LtdElectronic devices comprising n-type and p-type superlattices
    US-9691938-B2June 27, 2017The Silanna Group Pty LtdAdvanced electronic device structures using semiconductor structures and superlattices
    US-9871165-B2January 16, 2018The Silanna Group Pty LtdAdvanced electronic device structures using semiconductor structures and superlattices
    WO-2015157178-A1October 15, 2015Crystal Is, Inc.Dispositif émetteur de lumière ultraviolette et procédés
    WO-2015181648-A1December 03, 2015The Silanna Group Pty LimitedAn optoelectronic device